摘要
本文介绍了改良西门子法多晶硅生产中的硅芯制备技术,包括区熔法硅芯制备技术和切割法硅芯制备技术。简要介绍了两种硅芯制备技术的工艺流程,并对两种不同技术路线制备硅芯过程中的杂质分凝、挥发及坩埚污染进行了比较。根据分析结果,采用区熔硅芯能在一定程度上降低硅芯对硅棒的杂质贡献。
The filament preparation methods,such as zone refining method and wire or blade-cutting way,which have been used for poly-silicon production by modified Siemens process,are introduced,.The process flow of the two technologies are described briefly and the difference of the impurity segregation、evaporation and contamination are compared.According to the analysis,the filament prepared by zone refining method has less impurity and better impurity uniformity.Therefore,zone refining method is recommended for E-grade poly-silicon production.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2016年第3期513-516,485,共5页
Journal of Materials Science and Engineering
基金
云南省科技厅省院省校科技合作专项资助项目(2014IB003)
关键词
硅芯
杂质分凝
杂质挥发
坩埚污染
silicon filament
impurity segregation
impurity evaporation
crucible contamination