表面电磁波
出处
《大学物理》
1986年第5期1-6,共6页
College Physics
参考文献13
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1李勇峰,周航,吴翔.利用表面电磁波进行能量分配的研究[J].电子科技,2011,24(2):70-72. 被引量：1
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2吴丽娟,胡盛东,张波,李肇基.A new SOI high voltage device based on E-SIMOX substrate[J].Journal of Semiconductors,2010,31(4):46-51.
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3胡盛东,张波,李肇基,罗小蓉.A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device[J].Chinese Physics B,2010,19(3):496-502. 被引量：2
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4刘露.无线充电方兴未艾[J].百科知识,2014(6):19-20. 被引量：1
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5德国研制出世界最小光电信号转换器[J].化学分析计量,2014,23(3):101-101.
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6宋文仙,黄晓岳,李宏强,李英,张冶文,陈鸿.平面型金属-电介质光子带隙结构的表面电磁波传输特性[J].微波学报,2003,19(2):57-60. 被引量：2
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7王五松,张利伟,张冶文,方恺.基于二维特异材料波导的表面电磁波的慢波实验研究[J].物理学报,2013,62(2):237-243. 被引量：1
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8张文凯,任艳蓉,徐浩,房晓敏,丁涛,徐元清,陈旭东.银纳米线表面等离子波导研究进展[J].化学研究,2014,25(3):303-310.
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9张天浩,路彦珍,康慧珍,杨大鹏,郑建亚,方哲宇,楼慈波,杨嘉,杨会战,尹美荣.铌酸锶钡光折变表面电磁波实验[J].物理学报,2005,54(10):4688-4691. 被引量：5
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10Hu Sheng-Dong,Wu Li-Juan,Zhou Jian-Lin,Gan Ping,Zhang Bo,Li Zhao-Ji.Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^+-layer[J].Chinese Physics B,2012,21(2):445-449.
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