期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

HVPE法制备AlN单晶薄膜 被引量：1

Preparation of AlN Single Crystal Film by Hydride Vapor Phase Epitaxy(HVPE)
下载PDF
导出
摘要 采用氢化物气相外延(HVPE)在6H-SiC衬底上生长AlN单晶薄膜。利用热力学理论计算源区Al-NH体系中的物质平衡,表明源区温度为800~900K时,HCl与AlCl3气体分压为1∶3,主要产物是对石英管腐蚀较低的AlCl_3。控制源区温度800~900K,生长区温度1 373K,HCl流量25cm^3/min,分析NH_3和HCl流量比(R)对薄膜形貌及结晶度的影响。R=0.5时,获得表面平整光滑且厚度为7μm的AlN单晶。 AlN single crystal film was grown on 6H-SiC substrate by hydride vapor phase epitaxy（HVPE）.The thermodynamic theory was used to calculate the mass balance in the source region of Al-N-H system.It is indicated that when the source temperature is set to 800~900K,the partial pressure ratio of HCl and AlCl_3 will be 1∶3,and the main reactant will be AlCl_3 which owns lower corrosion to quartz tube.The experimental effect of flow ratio of NH_3 to HCl（R）on the morphology and crystallinity of AlN films was analyzed with the source temperature of 800~900K,growth area temperature of 1 373 K,and HCl flow of 25cm^3/min.AlN single crystal with smooth surface and thickness of 7μm is obtained under the Rratio of 0.5.
作者 李毓轩 秦知福
机构地区 中国电子科技集团公司第四十六研究所
出处 《压电与声光》 CAS CSCD 北大核心 2016年第3期409-412,共4页 Piezoelectrics & Acoustooptics
基金 国家重点研究基金资助项目
关键词 氢化物气相外延 氮化铝 热力学 NH3和HCl流量比 表面形貌 HVPE AlN thermaldynamics flow ratio of NH3to HCl surface morphology
分类号 O484.1 [理学—固体物理]
  • 相关文献

参考文献12

  • 1KUMAGAI Y,YAMANE T,KOUKITU A,et al.Growth of thick AlN layers by hydride vapor phase epitaxy[J].Journal of Crystal Growth,2005,281(1):62-67.
  • 2李诚瞻,刘键,刘新宇,薛丽君,陈晓娟,和致经.AlN插入层与AlGaN/GaN HEMT电流崩塌效应的关系[J].Journal of Semiconductors,2006,27(6):1055-1058. 被引量：2
  • 3杨瑞霞,武一宾,牛晨亮,杨帆.Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J].Journal of Semiconductors,2010,31(11):1-4. 被引量：1
  • 4OHBA Y,SATO R.Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio[J].Journal of Crystal Growth,2000,221(1/4):5704-5709.
  • 5KUMAGAI Y,YAMANE T,MIYAJI T,et al.Hydride vapor phase epitaxy of AlN:thermodynamic analysis of aluminum source and its application to growth[J].Physica Status Solidi,2003(7):2498-2501.
  • 6CHASE M W.NIST-JANAF thermochemical tables[M].4th ed.New York:Springer Verlag,1998.
  • 7CLAUDEL A,BLANQUET E,CHAUSSENDE D,et al.Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD[J].Journal of Crystal Growth,2009,311(13):3371-3379.
  • 8BOICHOT R,CLAUDEL A,BACCAR N,et al.Epitaxial and polycrystalline growth of AlN by high temperature CVD:experimental results and simulation[J].Surface&Coatings Technology,2010,205(5):1294-1301.
  • 9DOLLET A,CASAUX Y,CHAIX G,et al.Chemical vapour deposition of polycrystalline AlN films from AlCl3-NH3 mixtures,analysis and modeling of transport phenomena[J].Thin Solid Films,2002,406(1/2):1-16.
  • 10CAI D,ZHENG L L,ZHANG H,et al.Modeling of gas phase and surface reactions in an aluminum nitride growth system[J].Journal of Crystal Growth,2006,293(1):136-145.

二级参考文献22

  • 1Hall E, Kroemer H. Surface morphology of GaSb grown on (111)B GaAs by molecular beam epitaxy. J Cryst Growth, 1999, 203:297.
  • 2Ren H, Shen X. In situ observation of macrostep formation on misoriented GaAs(111)B by molecular beam epitaxy. J Cryst Growth, 1996, 166:217.
  • 3Joyce B A, Sudijono J L, Belk J G. Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: twodimensional versus three-dimensional growth and strain relaxation. Jpn J Appl Phys, 1997, 36:4111.
  • 4Takano Y, Kanaya Y, Torihata T, et al. Growth modes and reduction of hillock density in migration enhanced epitaxy of GaAs(111)B. J Cryst Growth, 1990, 102:341.
  • 5Yang K, Schowalter J. Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy. Appl Phys Lett, 1992, 60:1851.
  • 6Shitara T, Vedensky D D, Wilby M R. Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001). Phys Rev B, 1992, 46:6815.
  • 7Ouerghi A, Marangolo M, Eddrief M. Surface structures of MnAs grown on GaAs(111)B substrates. Phys Rev B, 2003, 68:115309.
  • 8Ohtake A, Nakamura J, Ozeki M. Strain relaxation in InAs/GaAs(111)A heteroepitaxy. Phys Rev Lett, 2000, 84: 4665.
  • 9Hayakawa T, Kondo M, Suyama T. Enhancement in optical transition in (111)-oriented GaAs-A1GaAs quantum well structures. Jpn J Appl Phys, 1987, 26:L302.
  • 10Chini A,Coffie R,Meneghesso G,et al.2.1A/mm current density AlGaN/GaN HEMT.Electron Lett,2003,39 (7):625

共引文献1

同被引文献11

引证文献1

二级引证文献1

压电与声光
2016年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部