摘要
采用氢化物气相外延(HVPE)在6H-SiC衬底上生长AlN单晶薄膜。利用热力学理论计算源区Al-NH体系中的物质平衡,表明源区温度为800~900K时,HCl与AlCl3气体分压为1∶3,主要产物是对石英管腐蚀较低的AlCl_3。控制源区温度800~900K,生长区温度1 373K,HCl流量25cm^3/min,分析NH_3和HCl流量比(R)对薄膜形貌及结晶度的影响。R=0.5时,获得表面平整光滑且厚度为7μm的AlN单晶。
AlN single crystal film was grown on 6H-SiC substrate by hydride vapor phase epitaxy(HVPE).The thermodynamic theory was used to calculate the mass balance in the source region of Al-N-H system.It is indicated that when the source temperature is set to 800~900K,the partial pressure ratio of HCl and AlCl_3 will be 1∶3,and the main reactant will be AlCl_3 which owns lower corrosion to quartz tube.The experimental effect of flow ratio of NH_3 to HCl(R)on the morphology and crystallinity of AlN films was analyzed with the source temperature of 800~900K,growth area temperature of 1 373 K,and HCl flow of 25cm^3/min.AlN single crystal with smooth surface and thickness of 7μm is obtained under the Rratio of 0.5.
出处
《压电与声光》
CAS
CSCD
北大核心
2016年第3期409-412,共4页
Piezoelectrics & Acoustooptics
基金
国家重点研究基金资助项目