基于共晶键合与对准切割的压电材料微细加工

Piezoelectric Material Micromachining Based on Eutectic Bonding and Alignment Dicing

高硬度陶瓷材料的微加工一直是微细加工的难题。为了解决此难题,采用金膜为中间层的硅-锆钛酸铅(Si-PZT)共晶键合工艺和带进刀标记的PZT压电陶瓷的切割加工,制备出块状PZT微结构。实验结果表明,当金膜厚为1μm时,Si-PZT的共晶键合强度可达20 MPa以上。这个强度可为PZT材料的切割加工和应用提供有力保障。Si-PZT共晶键合与PZT的对准切割加工结合的方法可在微细领域加工PZT等超硬材料,为加工PZT微结构阵列提供一种新途径。

It is very difficult for micromachining high hardness of ceramic materials.In order to solve this problem,the use of the gold film as the intermediate layer in Si-PZT（silicon-lead zirconate titanate）eutectic bonding process and the alignment dicing PZT,a bulk PZT microstructure is fabricated.The experimental results show that the eutectic bonding strength of Si-PZT can reach over 20 MPa when the gold film is 1μm in thickness.The strength provides a reliable base for PZT material micromachining.The method of Si-PZT eutectic bonding and the PZT alignment dicing had good processing capacity for super-hard materials such as PZT in the micro machining fields.It provides a new way for micromachining of PZT microstructures array.