ZnO纳米线阵列/PVK光电二极管制备与特性

Fabrication and characteristics of the ZnO nanowire array/PVK photodiode

采用水热方法在氧化铟锡（ITO）涂覆的玻璃基底上生长出良好取向排列的氧化锌（ZnO）纳米线阵列,采用场发射扫描电子显微镜（FESEM）、X射线衍射仪（XRD）分别测试ZnO纳米线阵列的形貌和晶相结构。测试结果表明：在基底上形成致密、良好取向排列的ZnO纳米线阵列,纳米线的直径为40～50 nm,长度在200～300 nm,具有六方纤锌矿结构。进一步与p型聚乙烯咔唑（PVK）混合,形成p-n异质结器件,研究该器件在暗态和光照下的电流密度-电压（J-V）特性。结果显示：该器件为光电二极管,在暗态和光照下的整流率分别为216和110。

Well-aligned ZnO nanowire arrays were grown on indium tin oxide（ ITO）-coated glass substrates by hydrothermal technique in this paper. The morphologies and crystalline structure of as-grown ZnO nanowire arrays were examined by field-emission scanning-electron microscopy（ FESEM） and X-ray diffraction（ XRD）,respectively. The results of these measurements showed the ZnO nanowire arrays contained densely packed,aligned nanowires with diameters from 40 to 50 nm,lengths from 200 to 300 nm and a wurtzite structure. Moreover,ZnO nanowire arrays / PVK p-n heterojunction device was produced using as-grown ZnO nanowire arrays combination with p-type poly（ 9-vinayl carbazole）（ PVK）. The current density-voltage（ J-V） characteristics of the device in the dark and under illumination were investigated in detail. The results exhibited that the device was a photodiode,the rectification ratios（ RR） of the device in the dark and under illumination were 216 and 110,respectively.