高质量半绝缘φ150mm 4H-SiC单晶生长研究

Study on the Growth of High Quality Semi-Insulating φ150 mm 4H-SiC Single Crystal

采用数值模拟研究PVT法φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数。研究表明φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 k Hz以下,系统分析不同生长参数下生长腔内径向及轴向温度梯度的变化规律。在此基础上初步的进行了φ150 mm 4H-SiC单晶的生长工作,获得了无裂纹、直径完整的高质量SiC衬底材料。拉曼光谱Mapping测量显示φ150 mm SiC衬底全片无多型,均为4H-SiC晶型。X光摇摆曲线显示半宽小于30 arcsec。采用掺杂过渡金属V杂质,获得了电阻率超过5×109Ω·cm的150 mm SiC衬底。

The temperature profiles for growth of φ150 mm 4H-SiC crystals using PVT method were studied by numerical simulation.The key growth parameters such as the power,frequency,and crucible position,insulation thickness were discussed.The results show that the growth power of φ150 mm 4HSiC crystals is two times larger than that of 2inch crystals.The optimized frequency is blow 5 k Hz.Crack-free high quality φ150 mm 4H-SiC crystal is obtained using the optimized temperature distribution.The whole area of the wafer is 4H-SiC measured by Raman spectrum mapping.The rocking curves of X ray shows that the full width at half maximum is less than 30 arcsec.The resistivity of φ150 mm SiC wafer is above 5 × 109Ω·cm.