溶剂熔区移动法生长In∶Cd_(0.9)Zn_(0.1)Te晶体的性能研究

Study on Properties of In Doped Cd_(0.9)Zn_(0.1)Te Crystal Grown by Traveling Solvent Melting Zone Method

采用溶剂熔区移动法生长出掺In的Cd_(0.9)Zn_(0.1)Te晶体。测试了晶体轴向Zn含量分布,并对晶体的头部和中部进行了Te夹杂相、红外透过率、I-V特性曲线和PL谱图的对比测试。结果表明:头部晶体的Zn含量、红外透过率和电阻率均大于中部;而头部晶体的Te夹杂尺寸、杂质和缺陷含量均小于中部。

In doped Cd_（0.9）Zn_（0.1）Te crystal was prepared by traveling solvent melting zone method.The axial Zn content distribution in crystal was measured.The Te inclusions distribution,IR transmittance,I-V characteristics,photoluminescence spectra of the wafers from tip and middle part of the ingot were also measured.The results indicate that Zn composition,IR transmittance and resistivity from the tip of the ingot are higher than those from the middle of the ingot.the Te inclusions,impurities and defects concentration are lower in the tip part as compared to the middle part of the ingot.