（1-x）ZnO-xMgO-TiO_2-SnO_2（x=0.1-0.2）高频介电陶瓷的制备、结构与介电性能

Preparation,Structure and Dielectric Properties of （1-x）ZnO-xMgO-TiO_2-SnO_2（x=0.1-0.2） High Frequency Dielectric Ceramics

采用氧化物固相烧结法制备了不同摩尔比的（Zn_（1-x）Mg_x）（Ti_（0.8）Sn_（0.2））O_3（x=0.1-0.2）高频介电陶瓷,研究了陶瓷的微观结构和介电性能。结果表明：烧结温度超过1000℃时,陶瓷中均形成了立方尖晶石结构的固溶相（Zn,Mg）2（Ti,Sn）O4。当烧结温度为1100℃时的陶瓷致密程度最高;当烧结温度为1200℃且x=0.15时,在10 MHz测试频率下获得了陶瓷的最佳介电性能,其介电常数ε=28.65,介电损耗tanδ=1.02×10-3,满足高频介电陶瓷的使用要求。

High frequency dielectric （Zn_（1-x）Mg_x）（Ti_（0.8）Sn_（0.2））O_3（x = 0.1-0.2） ceramics were prepared by conventional mixed-oxide method.The microstructure and dielectric properties of ceramic were studied.The results show that when the sintering temperature exceeds 1000 ℃,cubic spinel（Zn,Mg）2（Ti,Sn） O4 solid solution forms.The highest density of the ceramics can be obtained when the sintering temperature is 1100 ℃.The best dielectric properties can be obtained at the sintering temperature of1200 ℃ when x = 0.15 under 10 MHz test frequency,the dielectric constant ε is 28.65 and dielectric loss tanδ is 1.02 × 10-3,which meet the application requirements of high frequency dielectric ceramics.