High Resolution Medium Energy ion Scattering Analysis for Investigating UltraShallow Junction of Antimony Implanted in Conventional Silicon
High Resolution Medium Energy ion Scattering Analysis for Investigating UltraShallow Junction of Antimony Implanted in Conventional Silicon
出处
《材料科学与工程（中英文A版）》
2016年第1期17-22,共6页
Journal of Materials Science and Engineering A
关键词
离子散射
硅晶片
超浅结
植入
能量离子
高分辨率
互补金属氧化物半导体
锑
Antimony doped Si, ion implantation, rutherford backscattering spectroscopy （RBS）, medium energy ion scattering（MEIS）, rapid thermal annealing （RTA）, shallow junction formation.
参考文献11
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