摘要
为探究Al-Nb共掺对BaTiO_3介电性能的影响及其掺杂机制,以Ba Ti_(0.96)Al_(0.04)O_3为基础配方,通过传统的固相反应法制得BaAl_(0.04)Ti_(0.96-x)Nb_xO_3(0≤x≤0.08)陶瓷样品,并通过XRD、LCR分析仪和Gulp软件来对样品的结构、介电性能进行分析。结果表明:当x≥0.03时陶瓷样品中出现第二相;随着Nb^(5+)含量的增加,陶瓷从传统的铁电体转变成弛豫铁电体,介电峰值温度(Tm)向低温方向移动,且当x≤0.01时介电常数增大,当x≥0.02时介电常数减小;通过Gulp模拟分析得出晶体中钡空位补偿机制优先发生,可能伴有少量钛空位补偿,主要存在的缺陷簇是[2Nb_(Ti)~·-V_(Ba)~"]。
The BaA10.04Ti0.96-xNbxO3 （0≤x≤0.08） ceramics were prepared by solid state reaction method. The structure, dielectric properties and doping mechanism of BaTiO3 ceramics co-doped with Al-Nb were investigated by XRD, LCR analyser and Gulp software. The results reveal that when x≥0.03, a second phase appears in the ceramic samples. With the increasing of Nb5＋ doping content, the BaTiO3 ceramics transform from traditional ferroelectrics to relaxation ferroelectrics, the dielectric peak temperature （Tm） shifts to low temperature, the dielectric constant increases when x≤0.01, while it decreases when x≥0.02. Barium vacancy compensation mechanism occurs preferentially and a small amount of titanium vacancy compensation mechanism exists by the Gulp code calculation analysis. Defect dipoles in the crystal mainly are[2NbT）·-VBa] .
出处
《电子元件与材料》
CAS
CSCD
2016年第7期7-11,共5页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.11074203)
西华大学研究生创新基金资助(No.ycjj2015218
ycjj2015217
ycjj2015113)
