一种“L-2L”传输线去嵌入方法的优化分析

Optimization analysis of "L-2L" transmission line de-embedding method

介绍了一种基于硅基微波共面波导传输线的"L-2L"去嵌入技术的改进方法。该方法可更加精确地剥离在片器件S参数中探针焊盘寄生效应的影响。利用ADS软件对无焊盘的理想传输线结构进行了电磁仿真,确立了去嵌入结果精确度的判定标准。使用GSG微波探针提取了测试样品的S参数,推导了π型寄生参量等效电路模型中并联导纳Y不同位置(m=0,0.5,1)下左、右探针焊盘的ABCD矩阵,得到了去嵌入后在片器件的本征传输特性S参数,并结合电磁仿真对比。结果表明:m=1时,其S参数曲线与仿真结果最为接近(平均偏差量ΔS_(11)=18.431,ΔS_(21)=4.405,ΔS=11.418)。对于不同在片测试器件需要着重考虑m的取值。

A improved ＂L-2L＂ de-embedding technology based on silicon-based microwave coplanar waveguidetransmission line was presented to remove the influence of probe pad’s parasitic effect on the S-parameter of the deviceaccurately. In order to determine the standard of the improved de-embedding method, the ideal transmission line structurespads were simulated by using ADS software. S-parameter of the test sample was extracted usingGround-Signal-Ground） microwave probe. The ABCD matrix of the left pad and the right pad in single π typeparameters equivalent circuit model considering different position of shunt admittance（Y） （m=0, 0.5, 1） wasThe intrinsic characteristic S-parameter of the device on chips was obtained after de-embedding, and comparedelectromagnetic simulation. The results show the S-parameters curve of m=1 is more closed to that of electromagneticsimulation compared with two others （m=0, 0.5） （ΔS11=18.431, ΔS21=4.405, the average deviation of ΔS=11.418）. As fordevices on chips the m value should be taken into consideration seriously.