摘要
制备了ITO\P3HT(100 nm)\Al(70 nm)结构的有机压阻器件,并测试了其在不同压力下的I-V特性,发现了承压后动态电学特性不同的两种类型的压阻器件,且两种压阻器件都表现出负压阻特性.现认为器件类型的分化可能是由于P3HT黏流形变的作用.为了减小黏流形变和改善薄膜弹性,提出了一种薄膜制备改进工艺:真空快速成膜工艺和退火处理,二者结合可以提高薄膜的杨氏模量,减小薄膜的黏流形变,提高其机械性能稳定性,有助于稳定压阻器件的性能,拓宽传感器的量程.
The piezoresistive device with the structure of ITO/P3HT(100 nm)/A1(70 nm) was prepared and its I- V characteristics under different stresses were tested. Two types of devices with different dynamic electrical characteristic were found. The differentiation of the devices may be due to the existed deformation resulting from viscous flow in the P3HT film. Thus a method has been tried in the present work to decrease the viscous flow deformation and improve the mechanical characteristics of P3HT film. The method is fast volatilizing of solvent in vacuum to form drop-cast film and the next process of annealing. Through this method, the viscous flow deformation of the P3HT film can be reduced, which will benefit the mechanical characteristics of the P3HT film and thus the stability and repeatability of the performance of the piezoresistive sensors with P3HT film.
出处
《复旦学报(自然科学版)》
CAS
CSCD
北大核心
2016年第2期143-149,共7页
Journal of Fudan University:Natural Science
基金
国家自然科学基金(51373036
11134002)
上海市自然科学基金(12ZR1402400)
关键词
P3HT
压阻器件
黏流形变
真空快速成膜
退火
杨氏模量
P3HT
piezoresistive device
viscous flow deformation
vacuum drop-casting film
annealing
Young'smodulus