摘要
采用完全对称的双链路功率合成架构,设计了一种应用于北斗手持式终端的高输出功率的功率放大器。采用F类输出匹配网络和自适应偏置电路,使得该功率放大器获得较高的功率附加效率和较好的谐波抑制性能。电路采用InGaP/GaAs HBT工艺流片,并通过搭载基板实现了集成化芯片的研制。芯片测试结果表明,该功率放大器的小信号增益为30dB,1dB压缩点为37dBm,饱和输出功率为38dBm,功率附加效率为45%,具有较好的谐波抑制性能。
A high-output-power power amplifier was designed with a symmetric double-link power composite architecture for BeiDou satellite handset-based applications. The power added efficiency and the harmonic rejection capability were improved by utilizing the class F output matching network and the adaptive bias circuits. The integrated chip module of the proposed power amplifier was implemented in an InGaP/GaAs HBT process and mounted in a laminate. The measured results showed that the chip achieved 30 dB of S21, 37 dBm of 1 dB compression point, 38 dBm of saturated output power with 45% of PAE. High performances of harmonic suppression were obtained.
出处
《微电子学》
CAS
CSCD
北大核心
2016年第3期293-296,共4页
Microelectronics
基金
广东省领军人才专项资助项目(400130002)
