无片上电容的负载瞬态响应增强型LDO

A Capacitor-Less Low Drop-Out Regulator with Transient Response Enhancement Circuit

提出了一种无片上电容的低压差线性稳压器(LDO),通过增加转换速率增强电路,对LDO输出电压的变化进行探测,从而对误差放大器偏置电流进行补偿,达到改善负载瞬态响应的目的。该LDO基于0.18μm CMOS工艺设计,输出电压为1.2V,最大负载电流为100mA。仿真和测试结果表明,该LDO的瞬态负载响应改善明显,具有较好的低功耗特性,在保证电路稳定性的前提下,大大减小了芯片的面积。

A capacitor-less low drop-out regulator（LDO） was proposed, which could detect the output voltage movement of LDO by adding a slew rate enhancement circuit. In this way, the bias current of the error amplifier could be compensated, and the transient response could he improved a lot. The proposed LDO regulator was designed in the Global Foundry 0.18 μm standard CMOS process. The output voltage was 1.2 V, and the maximum load current was 100 mA. Simulation results showed that the transient response characteristics was greatly improved. It featured low power, stability, and small chip size.