SiC晶片加工技术现状与趋势

Recent Development and Perspective of SiC Wafer Machining

SiC单晶材料作为第三代半导体衬底材料,在制作高频、大功率电子器件等领域有着广泛的应用前景,而SiC加工技术对制作衬底材料起到决定作用。介绍了SiC国内外加工技术的研究现状,分析和对比了切割、研磨、抛光加工工艺的机理及晶片平整度、粗糙度的变化趋势,并指出SiC单晶片加工过程中存在的问题和未来的发展趋势。

As the third generation of semiconductor materials,Si C has a broad application prospect in many fields of producing high frequency,high power electronic devices,the machining technology of Si C plays an decisive role on producing substrate wafer. In this paper,the abroad and domestic development of Si C machining technology is introduced,the theory of slicing,lapping,polishing process and the variation of wafer flatness and roughness is analysised and compared,the issue and future development of Si C wafer machining is described.