摘要
论述了层间介质(ILD)的类型及其在集成电路设计中的作用。以典型层间介质SiO_2为例,分析其CMP(化学机械平坦化)工艺过程的化学和机械作用机理,并在此基础上阐述影响CMP工艺的各项关键因素。结合分析得出以SiO_2作为层间介质进行CMP的技术要求,工艺流程和设备结构需求。
The paper describes the type of ILD and applications in IC. As SiO_2 for example analyses the Chemistry and Mechanical function in CMP,and the key factors which will effect CMP process.According to all analysesinfer the technical requirements, process procedures and equipment configuration requirements of SiO_2 ILD.
出处
《电子工业专用设备》
2016年第6期40-44,共5页
Equipment for Electronic Products Manufacturing
关键词
层间介质
平整度
抛光垫
修整器
ILD（Inter Layer Dielectric）
Planarity
Pad
Pad Conditioner
