用于IGBT模块动态电热耦合仿真的损耗模型优化

Loss Model Optimization for Dynamic Electro-thermal Simulation of IGBT Module

绝缘栅双极晶体管(IGBT)模块动态电热耦合仿真分析的关键问题是损耗模型的准确建立.本文减少通态损耗模型线性近似处理次数,并根据产品数据手册拟合获取驱动电压对损耗的影响函数,从而对现有基于数据手册的损耗模型进行优化.在通态损耗模型中,将最大、最小典型温度下的损耗用电流的多项式进行拟合,利用线性插值的方法得到任意温度下的通态损耗,并考虑了驱动电压的影响.提出的损耗模型相比于现有基于数据手册的损耗模型,精度平均提高了9.21%,且使用工况更为广泛.

The key problem of the simulation analysis of dynamic electro-thermal coupling simulation of insulated gate bipolar transistor（IGBT）module is the accurate establishment of loss model.The existing loss model based on datasheet is optimized from reducing the linear approximation of the state loss model and obtaining the influence function of driving voltage on loss according to the product datasheet.In the conduction loss model,the loss at maximum and minimum typical temperature are fitted by the polynomial of current,then the conduction state loss at any temperature is obtained by using the linear interpolation method;and the influence of the driving voltage is considered.Compared to the existing loss model based on datasheet,the proposed model has a higher accuracy of 9.21%;and the use of the operating conditions is more extensive.