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金属-氧化物结点三次谐波特性分析与实验研究

Analysis and Experiment Study of the Third Harmonic Characteristics of Metal-Oxide Junctions
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摘要 基于金属与金属氧化物接触的势垒模型和整流理论,从金属-氧化物结点的非线性伏安特性出发,分析了金属-氧化物结点在微波照射下的谐波再辐射特性及结点上产生的三次谐波电流分量的表达式。此外,从金属-氧化物自身的角度出发,经过详细的理论推导,讨论了金属-氧化物结点再辐射特性中影响三次谐波电流分量强弱的因素。理论结果表明,其它条件相同时,当金属与氧化物的接触面积较小,或者金属与氧化物接触面的势垒高度较大时,金属-氧化物结点上再辐射的三次谐波电流分量较弱。最后,通过实验测试验证,当金属与氧化物的接触面积减小或者金属与氧化物接触面的势垒高度增大时,金属-氧化物结点上的三次谐波分量明显减弱。 Based on the barrier model and rectification theory of metal and metallic oxide contacts,and from the nonlinear current-voltage characteristics of the contacts,the radiation characteristics of the contacts and the third harmonic component generated in the contacts under microwave irradiation are analyzed in this paper. In addition,from the perspective of metal and metallic oxide contacts,the factors which influence the radiation characteristics of the third harmonic current component are discussed through a detailed numerical analysis. Based on the theoretical results analysis,it has been found that when the contact area of the metal and the oxide layer goes smaller,or the barrier height between the metal and the oxide layer surface becomes larger,a smaller third harmonic can be obtained. At last,experimental results demonstrate that with the contact area of the metal and the oxide layer decreasing,or with the barrier height between the metal and the oxide layer surface increasing,the third harmonic attenuates significantly.
出处 《微波学报》 CSCD 北大核心 2016年第3期41-45,共5页 Journal of Microwaves
基金 国家自然科学基金(61401207) 江苏省自然科学基金(BK20140793)
关键词 金属-氧化物 非线性特性 三次谐波 metal-oxide nonlinear characteristic third harmonic
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  • 1王雷,张义门,张玉明,盛立志.4H-SiC MESFET高频小信号特性的模拟与分析[J].西安电子科技大学学报,2004,31(6):825-828. 被引量:3
  • 2唐志凯,刘隆和,陶永刚.有源天线阵波束电扫描新技术[J].微波学报,2005,21(4):43-46. 被引量:13
  • 3Clarke R C, Palmour J W. SiC microwave power technologies[J]. Proceedings of the IEEE, 2002, 90(6) : 987- 992
  • 4Arif Ahmed, Syed Islam, Anwar A F. A temperature dependent nonlinear analysis of GaN/AlGaN HEMT using Voherra series[J]. IEEE Trans Microwave Theory Tech, 2001, 49 (9) : 1518-1523
  • 5Mukherjee S S, Islam S S. An analytical model of SiC MESFETs incorporating trapping and thermal effects [ C ]. Semiconductor Device Research Symposium, 2003 International, 2003. 366-367
  • 6LV Hongliang, ZHANG Yimen, ZHANG Yuming, YANG Lin-an. Analytical model of I-V characteristics of 4H-SiC based on muhiparameter mobility model[ J ]. IEEE Trans- actions on Electron Devices, 2004, 51(7) : 1065-1068
  • 7Siriex D, Noblanc O, Barataud D, et al. A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V) , pulsed S-parameter measurements [ J ]. IEEE Transactions on Electron Devices, 1999, 46(3) :580-584
  • 8Manohar S, Pham A, Evers Nicole. Direct determination of the bias-dependent series parasitic elements in SiC MESFETs[ J]. IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (2) :597-561
  • 9Sriram S, Augustine G, Burk A A, et al. 4H-SiC MESFET' s with 42GHz fmax [J]. IEEE Electron Dev Lett. 1996, 17(7) :369-371
  • 10Villard Frederic , Prigent J P, Morvan E, et al. Trapfree process and thermal limitations on large-periphery SiC MESFET for RF and microwave power [ J ]. IEEE Transactions on Microwave Theory and Techniques, 2003 51(4) :1129-1135

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