一种集成控制模块的微波SOI SPDT开关

A Microwave SOI SPDT Switch Integrated with Control Circuits

采用0.18μm CMOS SOI工艺设计制作了一种集成控制模块的微波单刀双掷开关。开关控制模块包含了低压差线性稳压器和负电压电荷泵,低压差线性稳压器将外部供电高电压转换为开关电路低电压,负电压电荷泵产生一个负压,用以改善开关的性能。制作的SOI开关具有良好的性能,芯片测试表明,开关导通状态下从DC到9 GHz范围内插损小于1.7 d B,关断状态下隔离度大于28.5 d B,回波损耗小于-15 d B,开关开启时间为1.06μs。芯片的尺寸为0.87 mm×1.08 mm。

A microwave SOI single-pole-double-throw（ SPDT） switch integrates a switch controller block,it is fabricated with 0. 18 μm CMOS SOI technology,the switch controller block contains LDO（ low dropout regulator） and a negative charge pump,LDO transforms the I / O voltage to bias the switch circuits,the negative charge pump generates a negative voltage to enhance the performance of switch. The SPDT switch presents good performance,on chip test result presented that： in on state the insertion loss is less than 1. 7 d B from DC to 9 GHz,its isolation in off state is better than 28. 5 d B,return loss is better than-15 d B,and the switching time is 1. 06 μs. The total size of SPDT switch is 0. 87 mm×1. 08 mm.