改善微波功率器件可靠性的方法

The Method of Improving the Reliability of Microwave Power Devices

微波功率器件因其具有体积小、可靠性高等优点而被广泛地运用在了微波通讯系统、遥测系统、雷达、电子对抗和导航等领域。但是,由于硅微波双极功率器件的结比较浅、基区比较窄,因而其击穿电压往往较低,从而对器件的大功率输出和抗烧毁能力造成了一定的不利影响。因此,从提高击空电压、镇流电阻设计、降低基区电阻设计、预匹配的选择和宽带半导体材料的采用等方面对提高硅微波双极功率器件的可靠性的具体措施进行了研究,对于改善硅微波双极功率器件的性能、提高其可靠性具有重要的指导意义。

With the advantages of small size and high reliablility, microwave power devices have been widely used in microwave communication system, telemetry system, radar, electronic warface, navigation and other fields. However, the breakdown voltage of silicon microwave bipolar power devices is relatively low due to its shallow junction and narrow base region, which has caused a certain adverse effect on its high power out put and burn-out resistance. Therefore, the specific measures to improve the reliability of silicon microwave power bipolar devices are studied from the aspects of improving breakdown voltage, the design of ballast resistance, the design for reducing base resistance, the selection of pre-matching and the adoption of wide bandgap semiconductor materials, which has important guiding significance to improve the performance and reliability of silicon microwave bipolar power devices.