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GaSb衬底上InAsSb材料的电学性能研究

Research on the Electrical Property of InAsSb Films on GaSb Substrates
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摘要 采用分子束外延(MBE)法在GaSb衬底上生长了不同组分的InAsSb外延膜。通过引入Al GaSb插层,实现对导电GaSb衬底上InAsSb材料电学性质的定性表征,并研究了生长温度和晶格失配对InAsSb外延层电学性能的影响。测试结果表明,在较低生长温度下获得的样品表面会形成缺陷,且其电学性能较差。对于一定晶格失配的样品,提高生长温度能获得较好的电学性能。 InAsSb epitaxial films are grown on GaSb substrates by Molecular Beam Epitaxy （MBE）. By utilizing a A1GaSb interlayer, the qualitative characterization for the electrical property of InAsSb films on GaSb substrates is realized, and the effect of growth temperature and lattice mismatch on the electrical properties of InAsSb films are studied. Test results show that surface defects are formed on the samples with low growth temperature, and the electrical property is poor. For the lattice mismatch samples, the better electrical property can be obtained by improving growth temperature.
作者 孙庆灵 姚官生 曹先存 王禄 王文奇 孙令 王文新 贾海强 陈弘
机构地区 中国科学院物理研究所 中国空空导弹研究院
出处 《航空兵器》 2016年第3期59-61,共3页 Aero Weaponry
基金 航空科学基金项目(20142435001) 中国博士后科学基金项目(2014M560936) 总装共用技术基金项目(9140A12050414ZK33-001)
关键词 INASSB 电学性能 分子束外延 InAsSb electrical property MBE
分类号 TN213 [电子电信—物理电子学]
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参考文献10

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