HEMT压力传感器

HEMT Pressure Sensor

利用Al Ga N/Ga N半导体的极化效应在异质结界面产生二维电子气(2DEG)的特性,设计了一种基于高电子迁移率场效应管(HEMT)的压强传感器;并利用标准的微电子工艺和背部深硅刻蚀技术制作了器件;对器件在不同压强下的源-漏I-V特性进行了测试和评价.结果表明本文设计制作的压强传感器的I-V特性对压强的变化能做出灵敏的反应.Ⅲ族氮化物半导体器件具有高速度、高灵敏、大功率和耐高温等特点,本压强传感器具有更广的应用领域.

The polarization of Al Ga N/Ga N semiconductor induces two-dimensional electron gas（ 2DEG） on the interface of the heterojunction. By taking advantage of this feature,a pressure sensor based on high-electron mobility transistor（ HEMT） is designed. The pressure sensor is also fabricated by using standard microelectronic process and backside silicon deep etching technology. The performances of source-drain I-V under different pressures are tested and evaluated. The results show that the source-drain I-V is very sensitive to the pressure change. Ⅲ nitride semiconductor devices have advantages such as high speed,high sensitivity,high power and high temperature performance,so the pressure sensor has a wide application field.