Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature

室温条件下射频磁控溅射法制备AZO薄膜的结构与光电性能（英文）

Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.

采用高致密度靶材在室温条件下玻璃衬底上RF磁控溅射制备铝掺杂氧化锌(AZO)薄膜。用X射线衍射仪、冷场发射扫描电子显微镜、紫外可见光分光光度计、四探针测试仪和霍尔测试仪分析表征薄膜的显微组织、表面形貌和光电学性能。结果表明,所制备的薄膜均为多晶六方纤锌矿结构,溅射功率对AZO薄膜的光电学性能,尤其是电学性能有重要影响。不同溅射功率下薄膜可见光平均透过率均大于85%,当溅射功率为200 W时,获得最小电阻率4.5×10^(-4)?·cm和87.1%的透过率。AZO薄膜禁带宽度随溅射功率不同在3.48~3.68 e V范围内变化。