摘要
采用反应磁控溅射技术在单晶硅基片上制备了CrN纳米单层膜和CrAlN/TiAlN纳米周期膜,利用非极化中子和X射线反射对膜层厚度、膜层界面粗糙度、界面扩散等表面、界面结构和性质进行了系统研究。中子反射测得的CrN纳米单层膜和CrAlN/TiAlN纳米周期膜的厚度与设计厚度的差别为3.8%~4.2%。散射长度密度（SLD）分析结果表明,膜层间和膜层与基底间界面较为清晰,扩散较少。X射线反射测得的膜层厚度较中子反射测得的膜层厚度偏高,对于较小调制周期的多层膜,界面弥散会对X射线反射结果产生较大误差。
CrN nano-scale monolayer film and CrAlN/TiAlN nano-scale multilayer with different periods were fabricated by DC magnetron sputtering.Neutron and X-ray reflection measured reflectivity were used to characterize the surface,interface structures and properties of the multilayer,such as film thickness,interfacial roughness and interfacial diffusion and so on.The results show that there is a difference of 3.8%-4.2%for the film thickness of CrN monolayer and CrAlN/TiAlN multilayer between the measured values by neutron reflectometry and pre-designed values.The interfaces between films and substrate are sharp and less diffusion.Moreover,the film thicknessof CrAlN/TiAlN multilayer obtained by X-ray reflection is larger than that of neutron reflectometry.For the multilayer with the smaller modulation periods,the interfacial diffusion may cause large errors for X-ray reflection results.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2016年第6期1112-1117,共6页
Atomic Energy Science and Technology
基金
中国工程物理研究院中子物理学重点实验室开放基金资助项目(2014BB05)
