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ZnO基透明导电薄膜及其稳定性研究进展

Research Progress of ZnO Based Transparent Conductive Films and Thermostability
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摘要 主要阐述Zn O基透明导电薄膜及其稳定性的研究现状,介绍了IIIA-IIIB族共掺杂Zn O透明导电薄膜的研究成果。 The research status of ZnO based transparent conductive thin films and their thermostability is mainly described. The research results of IIIA-IIIB Group Co-doped ZnO transparent conductive thin films are introduced.
作者 廖峻
机构地区 岭南师范学院物理科学与技术学院
出处 《广东化工》 CAS 2016年第11期114-115,111,共3页 Guangdong Chemical Industry
基金 岭南师范学院自然科学基金青年项目(QL1404)
关键词 ZNO 透明导电薄膜 热稳定性 ZnO transparent conductive thin film： thermostability
分类号 TN304.055 [电子电信—物理电子学]
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参考文献29

  • 1范志新,陈玖琳,孙以材.AZO透明导电薄膜的特性、制备与应用[J].真空,2000,37(5):10-13. 被引量：38
  • 2Yang W F, Liu Z G, Peng D L, et al. Room-temperature deposition of transparent conducting M-doped ZnO films by RF magnetron sputtering method[J]. Thin Solid Films, 2009, 517: 4644-4649.
  • 3Zhu H, Bunte E, Hiipkes J, et al. Aluminium doped zinc oxide sputtered from rotatable dual magnetrons for thin film silicon solar cells[J]. Thin Solid Films, 2009, 517: 3161-3166.
  • 4Yun D J, Rhee S W. Deposition of Al-doped ZnO thin-films with radio frequency magnetron sputtering for a source/drain electrode for pentacene thin-film transistor[J]. Thin Solid Films 2009, 517: 4644-4649.
  • 5Makino H, Miyake A, Yamada T. Structural, electrical and optical properties ofGa-doped ZnO films on cyclo-olefin polymer substrates[J]. Thin Solid Films, 2009, 517: 3130-3133.
  • 6Yim K, Lee C. Dependence of the electrical and optical properties of sputter-deposited ZnO: Ga films on the annealing temperature, time, and atmosphere[J]. Journal of Materials Science: Materials in Electronics, 2007, 18: 385-390.
  • 7刘疃昌.ZnO基薄膜和器件的制备及性能研究.浙江大学硕士论文,2008.
  • 8Ataev B. Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD[J]. Thin Solid Films, 1995, 260(1): 19-20.
  • 9Goppent M, Gehbauer F, Munzel J. Infrared-optical properties ofundoped and gallium doped ZnO[J]. Journal of Luminescence, 1997, 72: 430-431.
  • 10Shin H H, Joung Y H, Kangs J. Influence ofthesubstrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition[J]. Joumal of Materials Science: Materials in Electronics. 2009, 20(8): 704-708.

二级参考文献26

  • 1潘素瑛,梅森.溶胶凝胶法制备的ZnO气敏薄膜[J].传感器技术,1993(3):18-20. 被引量：2
  • 2朱兴文,李勇强,陆液,李英伟,夏义本.[101]取向Li掺杂ZnO薄膜光学性能的研究[J].无机材料学报,2007,22(2):359-362. 被引量：10
  • 3洪伟铭.掺铝对ZnO薄膜光学常数的影响[J].半导体光电,2007,28(2):205-208. 被引量：2
  • 4沈益斌,周勋,徐明,丁迎春,段满益,令狐荣锋,祝文军.过渡金属掺杂ZnO的电子结构和光学性质[J].物理学报,2007,56(6):3440-3445. 被引量：56
  • 5赵强,孙艳,郑丁葳,倪晟,王基庆,袁先漳.掺杂Al对DC反应溅射ZnO薄膜的影响[J].压电与声光,2007,29(3):324-327. 被引量：3
  • 6Ozgur U, Ya I Alivov, Liu C, et al. A comprehen- sive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98 (4): 041301.
  • 7Liu X Q, Bi W H, Liu Z L. Influence of post-annea- ling on the properties of Se-doped ZnO transparent conductive films deposited by radio-frequency sputte- ring [J]. Applied Surface Science, 2009, 255. 7942.
  • 8Ruchika Sharma, Kiran Sehrawat, Mehra R M. Epi- taxial growth of highly transparent and conducting Sc-doped ZnO films on c-plane sapphire by sol - gel process without buffer[J]. Current Appl. Phys., 2010, 10:164.
  • 9Segall M D, Lindan P J D, Probert M J. Frist princi- ples simulation :ideas, illustrations and the CaSTEP code [J]. J. Phys. Cond Matt. , 2002, 14 (11): 2717.
  • 10Monkhorst H J, Pack J D. Special points for Bril- louin-zone integrations [J]. Phys. Rev. B, 1976, 13 (12) : 5188.

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广东化工
2016年 第11期

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