超薄顶硅层SOI基新颖阳极快速LIGBT

Fast Speed LIGBT with a Novel Anode Based on Ultrathin-Top-Silicon SOI Substrates

提出一种利用浅槽隔离(STI)技术的超薄顶硅层绝缘体上硅(SOI)基新颖阳极快速横向绝缘栅双极型晶体管(LIGBT),简称STI-SOI-LIGBT。该新结构器件整体构建在顶硅层厚度为1μm、介质层厚度为2μm的SOI材料上,其阳极采用STI和p+埋层结构设计。新器件STI-SOI-LIGBT的制造方法可以采用半导体工艺生产线常用的带有浅槽隔离工艺的功率集成电路加工技术,关键工艺的具体实现步骤也进行了讨论。器件+电路联合仿真实验说明:新器件STISOI-LIGBT完全消除了正向导通过程中的负微分电阻现象,与常规结构LIGBT相比,正向压降略微增加6%,而关断损耗大幅降低86%。此外,对关键参数的仿真结果说明新器件还具有工艺容差大的设计优点。新器件STI-SOI-LIGBT非常适用于SOI基高压功率集成电路。

Using the shallow trench isolation（ STI） technology,the fast speed lateral insulated gate bipolar transistor（ LIGBT） with a novel anode based on ultrathin-top-silicon silicon on insulator（ SOI）substrates was proposed, which was called STI-SOI-LIGBT for short. The whole structure of the new device was constructed on the SOI material with the thickness top silicon layer of 1 μm and the insulated layer of 2 μm. The anode adopted STI and p＋buried layer structure design. The novel device STI-SOILIGBT can be fabricated by the power IC process with STI technology,which is commonly used in semiconductor process production line,and the detailed procedures for the key processes were discussed. The device-circuits simulation results show that the new device STI-SOI-LIGBT completely eliminates the negative differential resistance in the forward conduction process. Compared with the conventional LIGBT,the forward voltage drop increases slightly by 6%,and the turn-off loss is reduced sharply by 86%. The simulation results of the key parameters show that the new device has the advantage of large process tolerance. The proposed novel device STI-SOI-LIGBT is a promising device used in high voltage power ICs based on SOI.