新型整平剂TS-L对铜电沉积的影响

Effect of novel leveling agent TS-L on electrodeposition of copper

通过极化曲线、电化学阻抗谱、计时电流等电化学测量方法研究了整平剂TS-L对铜电沉积的影响。基础镀液组成为:Cu SO_4·5H_2O 75 g/L,H_2SO_4 240 g/L,Cl^-60 mg/L。结果表明,TS-L会抑制铜的电沉积,有利于得到平整、光亮的镀层。随TS-L用量增大,其抑制作用增强。TS-L的用量为50 mg/L时,铜的电沉积由基础镀液的三维瞬时成核转变为三维连续成核。随TS-L质量浓度的增大,镀液的深镀能力提高。在电镀液中添加50 mg/L整平剂TS-L、10 mg/L光亮剂TS-S和600 mg/L抑制剂TS-W时,深镀能力为87%,铜镀层的延展性和可靠性满足印制线路板行业的应用要求。

The effect of leveling agent TS-L on copper electrodeposition was studied by electrochemical methods including polarization curve measurement, electrochemical impendence spectroscopy and chronoamperometry. The basic plating bath is composed of 75 g/L CuSO4·5H2O, 240 g/L H2SO4 and 60 mg/L CF. The results showed that TS-L has an inhibitive effect on copper electrodeposition, which is beneficial to preparing level and bright coating. With increasing dosage of TS-L, its inhibitive effect is strengthened. The copper electrodeposition is changed from the three-dimensional instantaneous nucleation in basic bath to three-dimensional progressive nucleation when the dosage of TS-L is 50 mg/L. The throwing power of plating bath is improved with increasing TS-L content. The throwing power of the plating bath containing 50 mg/L leveling agent TS-L, 10 mg/L brightener TS-S and 600 mg/L inhibitor TS-W is 87% and the ductility and reliability of copper coating obtained from it meet the application demand of printed circuit board.