射频磁控溅射法制备Ti掺杂ITO薄膜的厚度对膜结构与光电性能的影响

Effect of thickness on structure and optoelectrical properties of Ti doped indium tin oxide thin films deposited by RF magnetron sputtering

利用Ti掺杂ITO靶材,采用单靶磁控溅射法在玻璃基底上制备厚度为50～300 nm的ITO：Ti薄膜。借助X射线衍射（XRD）、原子力显微镜（AFM）、可见光分光光度计、霍尔测试系统和四探针电阻测量仪,研究薄膜厚度对薄膜的晶体结构、表面形貌和光电性能的影响。结果表明：ITO：Ti薄膜呈现（400）择优取向,随薄膜厚度增加,薄膜的结晶程度增强,晶粒度增大,薄膜更致密。随薄膜厚度增加,薄膜的均方根粗糙度和平均粗糙度以及电阻率都先减小再增加,薄膜厚度为250 nm时,表面粗糙度最小,蒋膜厚度为200 nm时,电阻率最低,为2.1×10^-3Ω·cm。不同厚度的薄膜对可见光区的平均透过率都在89%以上。

Titanium-doped indium tin oxide （ITO：Ti） thin films were prepared on glass substrates with various film thicknesses （50-360 nm） by radio frequency （RF） magnetron sputtering using one piece of ceramic target material. The effects of thickness on the structural, surface morphology, electrical and optical properties of ITO：Ti films were investigated by means of X-ray diffraction （XRD）, Atomic Force Microscope （AFM）, ultraviolet （UV）-visible spectroscopy and electrical measurements. XRD patterns show the highly oriented （400） direction. With the increasing thickness, the crystallization enhances and grain size increases, Meanwhile, the film becomes more dense. As the film thickness increasing, the RMS roughness, average roughness and resistivity of the thin film decreases and then increases. RMS roughness is the lowest when the thickness is 250 nm. The lowest resistivity of the 200 nm thick film is2.1×10^-3Ω·cm. The transmittance of different thick film is more than 89% in the visible light range with different thickness.