摘要
在不同基片温度(RT、300、400、500和600℃)下,采用射频磁控溅射法制备了ZnO薄膜和BZN薄膜。研究表明,所制备的BZN薄膜拥有非晶态结构,ZnO薄膜具有c轴择优取向,在基片温度为500℃时,获得低的漏电流(10-7 A/cm^2),比RT时的漏电流(10-4 A/cm^2)低三个数量级。将所制备的ZnO薄膜和BZN薄膜分别作为ZnO-TFT的有源层和栅绝缘层,研究表明,在基片温度为500℃时,提高了器件性能,所取得的亚阈值摆幅(470mV/dec.)是RT时的亚阈值摆幅(1 271 mV/dec.)的三分之一;界面态密度(3.21×10^(12) cm^(-2))是RT时的界面态密度(1.48×10^(13) cm^(-2))的五分之一。
ZnO and BZN thin films were deposited by RF magnetron sputtering under different substrate temperature from RT to 600 ℃.It can be seen that BZN thin films are amorphous structure,and ZnO thin films has the c-axis preferred orientation.At 500 ℃,the leakage current density of BZN thin film is approximately three order magnitude lower than that of BZN thin film at RT.The sub-threshold awing（470mV/dec.）of ZnO-TFT with BZN thin films as gate insulator and ZnO thin films as active layer is approximately three times lower than that of device（1 271mV/dec.）at RT,and the surface state density（3.21×10^12 cm^-2）of ZnOTFT is approximately five times lower than that of device（1.48×10^13 cm^-2）at RT.
出处
《半导体光电》
CAS
北大核心
2016年第3期331-337,共7页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(51332003,51202184)
中国国际科学技术合作项目(2010DFB13640,2011DFA51880)
中国“111工程”项目(B14040)
