摘要
As a potential flexible substrate for flexible electronics, a polymer-sandwiched ultra-thin silicon platform is stud- ied. SU-8 photoresist coated on the silicon membrane improves its flexibility as shown by an ANSYS simulation. Using the plasma enhanced chemical vapor deposited Si02/Si3N4 composite film as an etching mask, a 4＂ silicon- （100） wafer is thinned to 26[tm without rupture in a 30wt.% KOH solution. The thinned wafer is coated on both sides with 20 pm of SU-8 photoresist and is cut into strips. Then the strips are bent by a caliper to measure its bending radius. A sector model of bending deformation is adopted to estimate the radius of curvature. The determined minimal bending radius of the polymer-sandwiched ultra-thin silicon layer is no more than 3.3mm. The fabrication process of this sandwich structure can be used as a post-fabrication process for high performance flexible electronics.
As a potential flexible substrate for flexible electronics, a polymer-sandwiched ultra-thin silicon platform is stud- ied. SU-8 photoresist coated on the silicon membrane improves its flexibility as shown by an ANSYS simulation. Using the plasma enhanced chemical vapor deposited Si02/Si3N4 composite film as an etching mask, a 4＂ silicon- （100） wafer is thinned to 26[tm without rupture in a 30wt.% KOH solution. The thinned wafer is coated on both sides with 20 pm of SU-8 photoresist and is cut into strips. Then the strips are bent by a caliper to measure its bending radius. A sector model of bending deformation is adopted to estimate the radius of curvature. The determined minimal bending radius of the polymer-sandwiched ultra-thin silicon layer is no more than 3.3mm. The fabrication process of this sandwich structure can be used as a post-fabrication process for high performance flexible electronics.
基金
Supported by the State Scholarship Fund of China
the Open Research Fund of Shanghai Key Laboratory of Multidimensional Information Processing of East China Normal University
