高增益宽频带GaN功率放大器设计

Design of the GaN power amplifier for high gain and ultra-wideband

针对新一代半导体材料氮化镓（Gallium Nitride,Ga N）带宽大、效率高的优点,利用ADS谐波平衡仿真软件,设计了一个1.5~2.5GHz宽带高效的功率放大器。设计采用Cree公司的Ga N高电子迁移率晶体管CGH40010F,利用晶体管的大信号模型进行电路仿真,结果显示,功放在1.5~2.5GHz频带内,饱和输出功率大于41.7d Bm,小信号增益大于18d B,功率附加效率大于70%。

This letter designs a 1.5~2.5GHz broadband highly efficient PA using the ADS harmonic-balanced simulator based on Ga N,a new semiconductor materials with wide bandwidth and high efficience.The PA was designed with Cree＇s Ga N HEMT CGH40010 F,and simulated with its large signal model.The result shows that the PA had a saturated power above 41.7d Bm,a small signal gain over 18 d B and the PAE above 74% in 1.5~2.5GHz frequency band.