航空辐射环境SRAM存储芯片单粒子翻转实验综述

Review of single event upset experiences about SRAM memory chips in air radiation environment

随着集成电子器件的快速发展,应用在航空电子系统中的SRAM型存储器件集成度也越来越高,尺寸越来越小,其发生单粒子翻转效应的可能性也越来越高,对航空飞行的可靠性和安全性带来严重的隐患。针对国外已有的SRAM型存储芯片的地面辐射实验、航空飞行实验结果进行归纳总结,分析SRAM存储芯片受单粒子翻转效应的影响以及失效特点。

With the rapid development of integrated electronic devices,the integration of SRAM memory devices which applied in avionics systems grew more and more high,and the sizes became smaller and smaller.It could also lead to the possibility of single event upset happen in SRAM memory become more and more high.The reliability and security of air flight will have serious hid-den troubles.In this paper,we will make a summary about SRAM memory chips experiments from the results of the ground radia-tion experiments and atmospheric flight experiments which have done by foreign institutions.At the last,the paper will analyse the effect and the failure characteristics of SRAM memory chips when they have single event upset.