摘要
Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597Ω ·μm to sub 200 Ω ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.
Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597Ω ·μm to sub 200 Ω ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.
基金
Project by the National Science and Technology Major Project,China(Grant No.2011ZX02707.3)
the National Natural Science Foundation of China(Grant No.61136005)
the Chinese Academy of Sciences(Grant No.KGZD-EW-303)
the Project of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515003)
