摘要
通过线性微波化学气相沉积技术在P型单晶样品上制备了AlO_x/SiN_x双层薄膜,采用场发射电子扫描显微镜、光学椭圆偏振仪器、有效少子寿命测量仪对实验样品进行了表征和分析。结果表明,线性微波化学气相沉积技术可以制备出高生长速度、高质量的AlO_x薄膜和SiN_x薄膜,AlO_x薄膜生长速度达到了180nm/min,SiN_x薄膜生长速度达到了135nm/min;经过AlO_x/SiN_x双层薄膜钝化的P型单晶硅有效少子寿命达到了2300μs,且经过800℃产线烧结工序,少子寿命下降幅度很低,热稳定性优异。
AlO_x/ SiN_x double- layered thin films were fabricated on p- Si substrates via linear micro wave plasma enhanced chemical vapor deposition. The as- obtained samples were characterized by SEM, spectroscopic ellipsometry and minor carrier lifetime measuring device. The experimental results show that the growth rate of AlO_xand SiN_x reached 180 and 135 nm / min,respectively. The effective minority carry lifetime of p- type c- Si passivated by the AlO_x/ SiN_x films arrived at 2300μs. The minor carrier lifetime just has a little decline after 800 ℃ sintering, indicating that the double- layered films show good heat stability.
出处
《真空》
CAS
2016年第3期7-11,共5页
Vacuum
基金
教育部博士点基金(20120042110031)
