期刊文献+

射频感应耦合等离子体朗缪双探针诊断分析 被引量:4

Langmuir double probe diagnostic analysis of RF inductively coupled plasma
下载PDF
导出
摘要 采用朗缪探针法对射频感应耦合等离子体进行了诊断分析,得到了圆柱形ICP放电装置的电子密度和电子温度。通过朗缪双探针研究了不同放电气压、不同射频功率、不同放电位置、不同气体组分对等离子体参数的影响。一定功率下,电子密度在30Pa-100Pa之间随气压的增加而增大,在100Pa-160Pa之间随气压的增加而减小,电子温度在30Pa-160Pa之间随气压的增加而减小;一定气压下,电子密度在50W-1900W之间随功率的增加逐渐增大,电子温度在50W-900W之间随功率的增加而减小,在900W-1900W之间随功率的增加而增大。等离子体辉光区域不同位置的电子密度和电子温度各不相同,电子密度大的位置具有较低的电子温度。氩氮混合气体的电子密度随着气压的增加而减小,氮气在混合气体中的比例越高混合气体的电子密度越小;氩氮混合气体相比纯氩有着更高的电子温度,且氮气含量越高混合气体的电子温度也越高。 We used the Langmuir probe method to analyze the RF inductively coupled plasma, the electron density and electron temperature of the cylindrical ICP discharge device were obtained. The plasma parameters were studied by the Langmuir double probe with different discharge pressure, RF power, discharge location and gas composition. Under a certain power, the electron density increased with the increase of the pressure at 30Pa-100 Pa, and decreased with the increase of the pressure at100Pa-160 Pa, the electron temperature decreased with the increase of the pressure at 30Pa-160 Pa. Under a certain pressure, the electron density increased with the increase of the power at 50W-1900 W, and the electron temperature decreased with the increase of the power at 50W-900 W, and increased with the increase of the power at 900W-1900 W. The electron density and electron temperature in different positions of the plasma glow region were different. The position with high electron density had a low electron temperature. The electron density of argon nitrogen mixture decreased with the increase of pressure, and the electron density of the mixed gas was smaller accompanying with the higher proportion of nitrogen. The electron temperature of argon nitrogen mixture was higher comparing with that of pure argon, and the electron temperature of the mixed gas was higher accompanying with that with higher nitrogen content.
出处 《真空》 CAS 2016年第3期56-61,共6页 Vacuum
基金 国际热核聚变实验堆(ITER)计划专项(国内研究)项目(编号2013GB109003) 国家自然科学基金(编号51571003)
关键词 射频感应耦合等离子体 朗缪双探针 电子密度 电子温度 RF inductively coupled plasma Langmuir double probe electron density electron temperature
  • 相关文献

参考文献18

  • 1Ren C S, Wang D Z, Zhang J et al. The Effect of External Cusp Magnetic Field on Ar ICP Characteristics [J]. Vacuum, 2008, 83 (2) :423-426.
  • 2U Kortshagen,N D Gibson, J E Lawler. On the E - H Mode Transition in RF Inductive Discharges [J]. Journal of Physics D-applied Physics, 1996,29(5): 1224-1236.
  • 3Lieberman M A,Lichtenberg A J.等离子体放电原理与材料处理[M].蒲以康,译.北京:科学出版社,2007:493-501.
  • 4John H Keller. Inductive Plasmas for Plasma Processing [J], Plasma Sources Sci. Technol,1996,5 (2): 166-172.
  • 5Keller J H, Forster J C, Barnes M S. Novel Radio - Frequency Induction Plasma Processing Techniques [J]. Journal of Vacuum Science & Technology A,1993,11 (5): 2487-2491.
  • 6Carter J B, Holland J P, Peltzer E et al. Transformer Coupled Plasma Etch Technology for the Fabrication of Subhalf Micron Structures[J]. Journal of Vacuum Science & Technology A,1993, 11(4): 1301-1306.
  • 7Gabriel C T, Melaku Y. Gate Oxide Damage in a High Density Inductively Coupled Plasma [J]. Journal of Vacuum Science & Technology B, 1994,12 ( 1 ): 454-460.
  • 8H. M. Mott-Smith, Irving Langmuir. The Theory of Collectors in Gaseous Discharges [J]. Physical Review, 1926,28 ( 4 ) :727-763.
  • 9Spolaore M, Antoni V, Bagatin,et al. Automalic Langmuir Probe Measurement in a Magnetron Sputtering System[J]. Surface and Coatings Technology, 1999, 116-119: 1083-1088.
  • 10唐中华,洪布双,徐东升,辛煜.放电参量对电负性容性耦合等离子体电子密度的影响[J].真空科学与技术学报,2014,34(1):84-90. 被引量:5

二级参考文献79

共引文献22

同被引文献29

引证文献4

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部