基于标准CMOS工艺的抗辐射带隙基准电路设计

Design Radiation Hardened Bandgap Reference Circuit based on Standard CMOS Technology

针对标准纳米CMOS工艺下实现的带隙基准电路抗辐射加固性能不高的问题,分析了带隙基准电路中采用的纵向衬底PNP三极管器件由于总剂量辐射效应引起基极漏电流增加、输出电压漂移的原因,探讨了采用栅氧化层隔离发射极的版图优化技术及动态基极漏电流补偿电路设计技术等提高标准CMOS工艺下低压带隙基准电路抗电离总剂量辐射能力的方法。

In the standard nanometer CMOS technology,the base leakage current of vertical substrate PNP transistor will increase in bandgap reference circuit after TID irradiation. This will lead to the change of the bandgap reference output voltage. With the design techniques such as gate oxide isolate PNP ＇s emitter and dynamic base leakage current compensation,the radiation harden capability of bandgap reference circuit will further improve.