横向磁场中直拉硅单晶生长

Transverse Magnetic Czochralski Silicon Single Crystal Growth

直拉法(Czochralski Technique)生长硅单晶是目前获得高质量大直径晶体的一种最常用工业化方法,在直拉法生长硅单晶过程中引入磁场可以有效抑制熔体对流,提高电阻率均匀性,控制氧含量、碳含量浓度,改善硅单晶微缺陷,从而获得高质量大直径硅单晶。主要介绍了熔体中的熔体对流、产生原因、磁场抑制熔体对流的原理,并以横向磁场为研究对象,分析了横向磁场的组成结构、工作原理。

Czochralski Technique growth of silicon single crystal is the most commonly used industrialization method to obtain high quality and large diameter crystal,The introduction of magnetic field in the process of the growth of silicon single crystal by Czochralski Technique can effectively restrain the convection of the melt,improve the uniformity of resistivity,controlle the content of oxygen and carbon content,and improve the micro defects of silicon single crystal,thus obtain high quality and large diameter silicon single crystal.This paper mainly introduces the melt convection,the cause of the production,the principle of the magnetic field to suppress the melt convection,and take the transverse magnetic field as the research object,analyzes the composition structure and working principle of the transverse magnetic field.