SOI压阻式压力传感器敏感结构的优化设计

Optimization Design of Sensitive Structure for SOI Piezoresistive Pressure Sensor

为提高SOI压阻式压力传感器的灵敏度,对传感器敏感结构的弹性膜片和压敏电阻的形状、尺寸等结构参数进行了优化设计。利用COMSOL Multiphysics多物理场耦合分析软件对优化后的敏感结构进行了静力学仿真与分析,完成了敏感芯片的制备和加压测试,测试结果表明:优化后的传感器输出灵敏度为5.98 m V/(V·bar),较原结构输出灵敏度提高了1倍,非线性误差小于0.096%。

In order to improve the sensitivity of SOI piezoresistive pressure sensor, the sensitive structural parameters of elastic diaphragm and varistor＇s shape and size were optimized.COMSOL Multiphysics more physical field coupling analysis software was conducted to simulate and analyze mechanical properties of the new sensitive structure.The fabrication and stress testing of the sen- sitive chip were completed.Testing results show that the designed sensor output sensitivity of sensitive structure is 5.98 mV/（ V · bar） that is doubled than the original structure,and nonlinearity error is less than 0.096%.