摘要
研究了基于新一代宽禁带1 200 V碳化硅(SiC)MOSFET三相双向逆变器,由于SiC MOSFET的高耐压、低损耗、高开关频率特性,逆变电路的拓扑结构得到简化,并提高了功率密度和可靠性。同时,利用碳化硅MOSFET的双向第三象限导通特性,与硅基IGBT相比省略了开关器件的反并联二极管。20 k VA实验样机验证了在该中大功率三相双向逆变器中SiC MOSFET相比硅基IGBT方案的优势。
In order to simplify the bi-directional topology and increase the overall system power density, in this paper a three-phase bi-directional inverter is proposed with a next generation wide bandgap（WBG）1 200 V silicon carbide（SiC）MOSFET. Thanks to high breakdown voltage and low losses of SiC MOSFET, the inverter topology is simplified and power density is increased with high switching frequency and high system reliability. Meanwhile, the bi-directional SiC MOSFET at third quadrant helps inverter to operate as normal without anti-parallel diode. A 20 k VA three phases bi-directional inverter prototype demonstrates the advantages of SiC MOSFET compared to the conventional Si based IGBT‘s solutions.
出处
《电源学报》
CSCD
2016年第4期59-65,81,共8页
Journal of Power Supply
关键词
碳化硅
宽禁带
双向逆变器
反并联二极管
第3象限
silicon carbide（SiC）
wide bandgap（WBG）
bi-directional inverter
anti-parallel diode
the third quadrant
