基于封装集成技术的高功率密度碳化硅单相逆变器

SiC Single Phase Inverter with High Power Density Based on Packaging Integration Technology

针对目前家用光伏系统、电动汽车(EV)和航空航天等领域中对单相逆变器的高功率密度需求,首先提出了一种基于新型碳化硅(SiC)功率模块的高功率密度单相集成逆变器。该单相逆变器采用直流侧并联BoostAPF抑制二次纹波,以此减小直流侧电容;采用高频低损的新型宽禁带SiC器件,将boostAPF和逆变器的开关频率提高到100kHz,显著地减小无源元件的体积。再提出一种新型高功率密度低感全SiC半桥混合封装结构,其尺寸仅为10mm×20.5mm,可以极大地减小杂散电感,显著降低了器件的开关应力、EMI干扰及开关损耗;通过采用直接散热结构,并对散热器及整机热流动进行优化设计,使得装置实现高效散热。最后,基于封装集成技术,研制出一台全数字控制的2kW、功率密度58.8W/in^3、CEC效率高达97.3%及最大效率98.3%的高功率密度单相逆变器。

With the increasing demand for single phase inverter with high power density in household photovoltaic system, electric vehicle（EV） and aerospace, a single phase inverter with high power density is presented in this paper based on a new type of silicon carbide（SiC） power integration module. The single-phase inverter uses DC Boost APF instead of DC side capacitance to absorb the low frequency ripple,which can reduce the volume of decoupling capacitance; utilizes wide band gap devices SiC whose advantages is less loss at high switching frequency and increases switching frequency of boost APF and inverter up to 100 k Hz,which can further reduce the size of the passive components; and puts forward a novel SiC half bridge hybrid packaging structure with high power density and low stray inductance, which is only 10mm×20.5 mm in size and can greatly reduce the stray inductance so that the stress of switching devices, switching loss and EMI can be significantly reduced; uses direct cooling structure and optimizes heat sink and heat flow design,which makes the device to realize efficient heat dissipation. Finally based on packaging integration technology, a single-phase inverter with high power density is developed, Whose power is 2 k W, power density reachs 58.8 W／in3, CEC efficiency reachs 97.3%and maximum efficiency reachs 98.3%.