Growth interface of CdMnTe crystal by traveling heater method

移动加热器法生长CdMnTe晶体的生长界面（英文）

The growth interfaces of CdMnTe（CMT） crystals grown by traveling heater method（THM） were studied. Two types of polycrystalline CMT feed ingots synthesized in a traditional rocking furnace and vertical Bridgman（VB） furnace were adopted in THM growth, and the effects of the polycrystalline feed on the growth interface were revealed. The morphology of the growth interface of CMT crystal（CMT2） grown from the feed by vertical Bridgman was smoother with lower curvature compared with that of CMT crystal（CMT1） from the feed by rocking furnace. The radial Mn composition and Te inclusion distribution of the CMT wafers were analyzed and correlated to the growth interface. The Mn segregation along the radial direction and Te inclusion density of CMT2 were lower than those of CMT1. The VB method synthesized polycrystalline feed could improve the growth interface morphology, which is beneficial for decreasing the Te inclusions and Mn segregation in CMT wafers.

研究了移动加热器法生长CdMnTe晶体的生长界面。采用传统摇摆炉和垂直Bridgman炉合成多晶原料,并比较了不同多晶原料对移动加热器法生长界面的影响。结果显示,采用垂直Bridgman法合成多晶生长的CdMnTe晶体(CMT2)相对于传统摇摆炉合成多晶生长的晶体(CMT1),其生长界面较为光滑且凹面曲率更低。分析了生长界面对CdMnTe晶体的Mn成分和Te夹杂相分布的影响。CMT2晶体Mn的径向成分分凝和Te夹杂相密度及尺寸均小于CMT1晶体。总之,垂直Bridgman法合成多晶原料能明显改善生长界面的形态,有利于降低移动加热器法生长Cd Mn Te晶体的Te夹杂相和Mn的成分分凝,提高晶体的质量。