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基于电化学沉积原理的直写高密度铜微米线列

High Density Micro-Wire Array Based On Three Dimensional Direct- Writing Copper Wires
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摘要 基于电化学沉积技术制备微纳米线主要依赖于具备微纳米口径的针管尖端,但这类玻璃针管尖端呈现锥形,难以实现高密度微纳米线阵列的直写。本文基于解决该限制因素,改进加工工艺,系统研究了直写针管与水平基底所成角度微铜线直写的影响,较好的解决了小间距的高宽深比微纳米线列的制备限制.为小间距微纳米线列的制备提供了一种可行性的技术方法。 In an electrodeposition direct-writing approach, micro-/nano-structures are directly fabricated without the use of masks, which allows rapid prototyping. The main tool is the subuliform pipette, which has an influence on fabricating high density microwires array. In this dissertation, the 3-D meniscus-confined electrodeposition method was improved and studied for this restrictive factor. A theoretical modeling was provided to illustrate the mechanism and give a guide for tuning the growth parameters.
出处 《纳米科技》 2015年第5期38-42,共5页
关键词 电沉积 直写 铜微米线 electrodeposition direct-writing copper mcrowires
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参考文献6

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