Si-Si_(0.7)Ge_(0.3)-Si结构的电阻特性

Resistance Characteristics of Si-Si_(0.7)Ge_(0.3)-Si Structure

Si-Si_(0.7)Ge_(0.3)-Si结构在激光的照射下,电阻值会随激光照射点位置的改变而改变.通过实验测量获得激光扫描Si-Si_(0.7)Ge_(0.3)-Si结构样品表面的二维数据分布图,并对水平方向与垂直方向进行分析,得到的电阻灵敏度最高为8.59 MΩ/mm.当激光在器件表面上的扫描线偏离X轴时,灵敏度会逐渐降低为7.72、3.98和1.50 MΩ/mm.研究表明,作为一种新型的位移传感器,Si-Si_(0.7)Ge_(0.3)-Si结构的电阻—位置关系曲线具有灵敏度高和线性关系好的特点.

Illuminated by the laser, the resistance of Si-Si0.vGe0.3-Si structure changes with the laser spot position. The two-dimensional date distributions diagram of the sample surface were obtained by laser scanning experiment, and the resistance sensitivity of the horizontal and vertical sectional views were studied. Then,the highest sensitivity was got as 8.59 MΩ/mm. When the scanning line was deviating the X axis on the Si surface,the sensitivity gradually reduced followed by 7.72,3.98 and 1.50 MΩ/mm. The study shows that as a new position sensor detector,the Si-Si0.7Ge0.3-Si structure has characteristics of high sensitivity and linear relationship in change curve of the resistance and the position.