辉光放电质谱法测定氧化铟锡靶材中的元素含量

Impurities concentration detection in ITO target by glow discharge mass spectrometry

利用辉光放电质谱仪(GDMS)一次性直接测定ITO靶材中的主体元素和痕量元素。首先考察了ITO样品中的元素和Ar,H,O,N等气体元素形成的多原子离子干扰,利用X射线光电子能谱确定氧化铟锡靶材的主体元素In和Sn的组分,通过GDM S校正获得二者的相对灵敏度因子(RSF),从而对ITO中的In和Sn进行定量,并利用典型RSF对其他痕量元素进行半定量。测试的结果具有较好的准确度和精度。利用校正RSF和典型RSF相结合进行测试的方法同样适用于类似的掺杂的半导体材料。

A new method for the determination of major and trace elements in ITO target by GDMS simultaneously was developed. Firstly the interferences of polyatomic ions combined with isotope Ar,H,O,and N were carefully investigated. The components of major elements Indium and Stannum in ITO target were confirmed by XPS.By correcting Relative Sensitivity Factors（ RSFs） using GDMS,In and Sn were quantitatively analyzed. The other trace elements were semi-quantitatively analyzed by std RSF. The result with good precision and accuracy was obtained. The results show GDMS is a effective method for direct analysis of ITO target. The combination of corrected RSF and std RSF for measuring is also suitable for other doping semiconductor materials.