Z-源/准Z-源逆变器拓扑的演绎机理

Evolution Mechanism of Z-source/Quasi-Z-source Inverter Topologies

为合理选择、设计新型Z-源逆变器(ZSI),需准确理解和把握众多Z-源/准Z-源逆变器拓扑的内在联系。通过分析传统Z-源逆变器的特点、工作原理及拓扑演绎的可行性,结合现有Z-源/准Z-源逆变器拓扑的特征,提出了其拓扑演绎的位置变换原理、替代原理及增强原理,并详细阐释了每一原理的含义及其演化方法。应用替代原理和增强原理,还可演化出多种新型Z-源逆变器拓扑,如带抽头电感的非对称ZSI拓扑和对称增强型ZSI拓扑等,以满足工程应用。研究结果表明:在输入电压为48 V、直通占空比为0.17、调制比为0.8的实验条件下,根据上述原理演绎得到的新拓扑的输出电压为80 V,明显高于传统拓扑的35 V及改进型拓扑的45 V。

To accurately understand and grasp the inner link of umpteen topologies of Z-source/quasi Z-source inverters is a prerequisite for rational selection or design of novel Z-source inverters（ZSI）. Based on the analysis of characteristics, operating principle and evolution feasibility of traditional ZSI topology, and combined with the characteristics of the existing numerous topologies, the basic evolution mechanism of ZSI/quasi ZSI named location exchanging principle, replacement principle and enhancement principle are proposed. The connotation and application of each principle are elucidated. With the replacement principle and enhancement principle, many other novel topologies such as asymmetric ZSI topology with tapped inductor and symmetric enhanced ZSI topology can be evolved to meet the needs of practice. The simulation results show that, under the conditions of input voltage equals 48 V, shoot-through duty cycle equals 0.17, modulation ratio equals 0.8, the output voltage of the novel topology according to the proposed principles is 80 V, which are higher than those 35 V and 45 V of traditional and existing ones.