Y_2O_3掺杂对BCZT无铅压电陶瓷性能影响

Effects of Y_2O_3 doping on electrical properties of BCZT lead-free piezoelectric ceramics

采用传统氧化粉末固相反应法制备出了稀土氧化钇 Y2O3掺杂 （Ba0.85Ca0.15） （Ti0.9Zr0.1）O3[简称 BCZT-xY]无铅压电陶瓷.通过X射线衍射仪（XRD）及扫描电镜（SEM）研究了不同Y2O3掺杂量（x=0.2%~0.8%,质量分数）对BCZT的相结构、显微组织的影响.结果表明,适量掺杂BCZT陶瓷均可获得单-的钙钛矿结构陶瓷,当x为0.6%时获得样品的衍射强度较大;所制陶瓷的电学性能随着 Y2O3掺杂量的变化显著变化,在烧结温度为 1 480 ℃时,当Y2O3掺杂量x为0.2%时,陶瓷电学性能最优,在1 kHz频率下室温测得各项参数为：压电常数d33 =208 pC/N,介电损耗tanδ=0.018 2,相对介电常数εr=5 172.97.适量Y2O3掺杂能够改善BCZT压电陶瓷的电学性能.

Rare-earth yttrium oxide （Y2O3） doped （Ba0.85Ca0.15）（Ti0.9Zr0.1）O3 （for short BCZT-xY） lead-free piezoelectric ceramics were prepared by solid state reaction method. The effects of different amounts of Y2O3 （x=0.2%–0.8%, mass fraction） doping on phase composition and microstructures of BCZT ceramics were investigated by XRD and SEM. The results show that all samples consist of pure perovskite structure with moderate rare-earth Y2O3 being substituted into the grains of BCZT; with the increasing of Y2O3 doping amounts, the electrical properties of ceramics differentiate obviously; when the doping amount of Y2O3 is 0.6%, the ceramics obtained the best room-temperature performances at 1 kHz as follows： piezoelectric constant d33 =208 pC/N, dielectric loss tanδ=0.018 2, relative dielectric constant εr=5 172.97, which is indicated that appropriate amount of Y2O3 doping can improve the electrical properties of BCZT.