摘要
重点介绍了电子科技大学电子薄膜与集成器件国家重点实验室在国家自然科学基金资助下开展的有机薄膜晶体管(OTFT)气体传感器方面的研究进展。制备了酞菁铜(CuPc)薄膜为有源层的底栅底接触式结构的有机薄膜晶体管,对器件的制备工艺和结构参数进行了优化,研究了其对H_2S气体的敏感特性。同时制备了P3HT-ZnO纳米棒的复合薄膜、P3HT单层薄膜、P3HT-MoS_2分层膜和复合膜的有机薄膜晶体管气体传感器,系统地分析了OTFT器件的电学性能和气敏特性。
This paper discusses the research progress of organic thin film transistors (OTFT) gas sensors in the State Key Laboratory of Electronic Thin Films and Integrated Devices of University of Electronic Science and Technology of China, under the support of the National Natural Science Foundation of China. In this work, organic thin film transistor with a bottom-gate bottom-contact type structure was used as the sensor element, the preparation process and structure parameters of the device were optimized, and the sensing properties of copper phthalocyanine (CuPc) film to H_2S were studied. Besides, the OTFT gas sensor based on P3HT-ZnO nanorods composite film, P3HT single-layer film, P3HT-MoS_2 composite and layered film was fabricated. Furthermore, the electrical properties and gas sensing performance of OTFT device were analyzed systematically.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2016年第4期664-673,共10页
Journal of University of Electronic Science and Technology of China
基金
国家自然基金(61571097
61421002)