黑硅红外探测器研究进展

Progress in Black Silicon Infrared Detectors

黑硅材料具有良好的光学吸收特性,广泛用于太阳能电池和红外探测器的制备中。基于黑硅材料制备的探测器具有光谱响应度大、响应范围宽、响应曲线较为平直等优点,介绍了黑硅红外探测器国内外的研究进展,其中涉及的黑硅制备方法包括飞秒激光辐照、皮秒激光辐照、湿法腐蚀、离子注入结合准分子纳秒激光辐照。讨论了目前黑硅红外探测器制备中存在的问题,包括黑硅在退火过程中吸收率下降严重以及黑硅表面电极制备难、载流子横向输运能力差等问题。对存在的问题进行了分析,总结了当前的解决方法,展望了黑硅红外探测器的发展趋势和应用前景。

Black silicon is widely used in making solar cells and infrared detectors due to its excellent optical absorption property. The detectors made by black silicon have the advantages of high spectral responsivity, wide range and flat spectral response. The research progress of black silicon infrared detectors at home and aboard is introduced, and the involved fabrication methods of black silicon are introduced including femtosecond laser irradiation, picosecond laser irradiation, wet etching, and ion implantation combined with excimer nanosecond laser irradiation. The problems in making black silicon infrared detectors are discussed, including the tremendous decrease of absorption efficiency, during annealing and the difficulty in making electrode on black silicon surface as well as the inferior characteristic of carrier transverse transporting. At the same time, the current solutions of these problems are summarized. The existing problems are analyzed, and the trends and prospect in the developing application of black silicon infrared detectors are also predicted.