多孔硅层转移法制备超薄晶硅太阳电池的研究进展

Research Progress in Fabrication of Ultra-Thin Crystalline Silicon Solar Cells in Transfer Approach of Porous Silicon Layer

介绍了基于电化学腐蚀多孔硅层转移法制备超薄晶硅太阳电池的研究进展,对多孔硅层转移法制备超薄晶硅太阳电池的四个主要步骤:双层多孔硅的制备、活性超薄晶硅外延层生长、基于多孔硅的层转移和超薄晶硅太阳电池研制进行了概述,并对超薄晶硅太阳电池的前景进行了展望。

The latest progress in fabrication of ultra-thin crystalline silicon solar-cells,based on transfer approach of the electrochemically etched porous Si-based layers,was tentatively reviewed. The newly-developed 4-step technique includes： i） fabrication of double-layered porous Si on re-usable Si-wafer by electrochemical etching and high temperature annealing in atmosphere,such as O_2,Ar,N_2 and H_2; ii） epitaxial growth of ultra-thin（ 10 ~ 30μm）,active Si-layer on the porous Si-layers by conventional coating techniques,including the low pressure chemical vapor deposition（ LPCVD）,atmospheric pressure APCVD,hot-filament HWCVD and liquid phase epitaxy（ LPE）;iii） peeling off and transferring of the epi-Si / double-layered porous Si-foil from Si-wafer onto substrate of glass and /or stainless steel; and iv） fabrication of solar cells on the transferred ultra-thin Si-foil. Moreover,the development trends,technical problems and possible solutions in fabrication of ultra-thin crystalline Si solar cells in the transfer approach were discussed in a thought provoking way.