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正交电场作用型自旋场效应管的自旋极化控制(英文)

Spin polarization control of the spin field effect transistors due to two orthogonal electric fields
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摘要 研究了电场调控型自旋场效应管的量子输运过程。该场效应管主要由双正交电场和Rashba自旋轨道耦合共同调制。运用散射矩阵方法并结合介观体系的相关输运理论,揭示了自旋场效应管在各参数调控下的自旋量子输运过程,其自旋输运规律可由相关理论给予解释。数值计算表明,与平行电场相比,对于自旋轨道耦合型自旋场效应管的量子输运,垂直电场的调制能够导致更加明显的自旋翻转。 Quantum transports of the spin field effect transistors (SFET) tuned by electric field are investigated inthis work. Target modulations of the SFET are two orthogonal electric fields and the Rashba spin-orbit coupling(SOC). By using the scattering matrix method and related transport theories in mesoscopic systems, investigationsreveal that spin quantum transport of the SFET can be adjusted by the parametric modulations. Implements of thespin transport are systematic presented in theory. Numerical calculations show that compared to the parallel electricfield, the perpendicular coupling modulations can make an even more remarkable spin flipping to the quantumtransport in the SOC system.
出处 《湖南文理学院学报(自然科学版)》 CAS 2016年第3期38-44,共7页 Journal of Hunan University of Arts and Science(Science and Technology)
基金 湖南文理学院博士启动基金(10133004) 湖南省自然科学基金(12JJ3061) 湖南省自然科学基金(2016JJ3096)
关键词 自旋场效应管 自旋轨道耦合 电场 spin field effect transistors spin orbit coupling electric fields
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  • 1Datta S, Das B. Electronic analog of the electro-optic modulator [J]. Appl Phys Lett, 1990, 56(7): 665-667.
  • 2Ohno Y, Young D K, Beschoten B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].Nature, 1999, 402: 790-792.
  • 3Schapers Th, Nitta J, Heersche H B, et al. Interference ferromagnet/semiconductor/ferromagnetic spin field effecttransistor [J]. Phys Rev B, 2001, 64: 125314(1-5).
  • 4Khodas M, Shekhter A, Finkelstein A M. Spin polarization of electrons by nonmagnetic heterostructures: The basics ofspin optics [J]. Phys Rev Lett, 2004, 92(8): 086602(1-4).
  • 5Bercioux D, De Martino A. Spin-resolved scattering through spin-orbit nanostructures in graphene [J]. Phys Rev B, 2010,81: 165410(1-9).
  • 6Saarikoski H, Vazquez-Lozano J E, Baltanas J P, et al. Topological transitions in spin interferometers [J]. Phys Rev B,2015, 91: 241406(R)(1-5).
  • 7Wolf S A, Awshalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future [J]. Science,2001, 294:1 488-1 495.
  • 8Zutic I, Fabian J, Das Sarma S. Spintronics: fundamentals and applications [J]. Rev Mod Phys, 2004, 76: 323-410.
  • 9Rashba E I. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem [J].Phys Rev B, 2000, 62(24): 67-70.
  • 10Lee M, Choi M S. Ballistic spin currents in mesoscopic metal/In(Ga)As/metal junctions [J]. Phys Rev B, 2005, 71:153306.

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